发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT CHIP
摘要 A semiconductor device including a plurality of circuit regions formed in a semiconductor substrate and a scribe region formed around the circuit regions for separating the respective circuit regions, the scribe region having a plurality of laminated interlayer films including a plurality of metal films and an optically-transparent insulation film formed between and on the plurality of metal films, wherein a first metal film included in a first upper interlayer film of the plurality of interlayer films is positionally offset in a vertical direction to a second metal film included in a second lower interlayer film under the first interlayer film.
申请公布号 US2010133659(A1) 申请公布日期 2010.06.03
申请号 US20090578901 申请日期 2009.10.14
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 HARA AKIO;SAWADA TOYOJI;KOYASHIKI TSUYOSHI;FUKAYA HIRONORI
分类号 H01L23/544;H01L21/78 主分类号 H01L23/544
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