发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT CHIP |
摘要 |
A semiconductor device including a plurality of circuit regions formed in a semiconductor substrate and a scribe region formed around the circuit regions for separating the respective circuit regions, the scribe region having a plurality of laminated interlayer films including a plurality of metal films and an optically-transparent insulation film formed between and on the plurality of metal films, wherein a first metal film included in a first upper interlayer film of the plurality of interlayer films is positionally offset in a vertical direction to a second metal film included in a second lower interlayer film under the first interlayer film. |
申请公布号 |
US2010133659(A1) |
申请公布日期 |
2010.06.03 |
申请号 |
US20090578901 |
申请日期 |
2009.10.14 |
申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
HARA AKIO;SAWADA TOYOJI;KOYASHIKI TSUYOSHI;FUKAYA HIRONORI |
分类号 |
H01L23/544;H01L21/78 |
主分类号 |
H01L23/544 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|