| 摘要 |
PROBLEM TO BE SOLVED: To suppress an increase in bit line capacity even when a ferroelectric memory fuse is provided. SOLUTION: The ferroelectric memory device 70 includes a sense amplifier 1, a ferroelectric memory fuse part 40, and a cell unit SU1. The ferroelectric memory fuse part 40 includes a ferroelectric memory fuse 2a, a ferroelectric memory fuse 2b, a select transistor STff/, and a select transistor STff. The ferroelectric memory fuses 2a and 2b have the same structure as a memory cell part 11, a memory cell part 12, a memory cell part 21, and a memory cell part 22 disposed in the cell unit SU1. A bit line BL and a bit line BL/ disposed in the cell unit SU1 are not extended to the ferroelectric memory fuse part 40. COPYRIGHT: (C)2010,JPO&INPIT |
