发明名称 WAFER TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a wafer treatment device which can eliminate the contamination of a bevel of a wafer effectively without damaging an element. SOLUTION: This wafer treatment device has: a chamber 1; a stage 6 arranged in the chamber 1 for mounting a wafer 7 as a treatment target; a plasma generating means for forming plasma 9 in the chamber 1; an isolation member 10 arranged in the chamber 1 so as to isolate the plasma 9 from the wafer 7; and a through hole 11 formed at an outer peripheral part of the isolation member 10 so as to move a radical 9A generated by the plasma 9 around an outer peripheral part of the wafer 7 selectively. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010123695(A) 申请公布日期 2010.06.03
申请号 JP20080294907 申请日期 2008.11.18
申请人 MEIKO:KK 发明人 YONEYAMA SHIMAO;SAKAMOTO HITOSHI
分类号 H01L21/304;H01L21/3065;H01L21/683 主分类号 H01L21/304
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