| 摘要 |
PROBLEM TO BE SOLVED: To form an oxide semiconductor TFT having a fine property, which can be utilized for driving elements of a display, on an inexpensive glass substrate or a resin substrate such as PET that is light and flexible with fine regenerability and yield. SOLUTION: Through irradiating an oxide semiconductor with pulse light, a fine-quality oxide semiconductor film 4 can be formed on the glass substrate 21 or the resin substrate 1 such as PET. This makes it possible to manufacture thin film devices having a fine property with fine regenerability and yield. COPYRIGHT: (C)2010,JPO&INPIT |
