| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which data read operation speed can be increased. Ž<P>SOLUTION: The nonvolatile semiconductor memory device includes a memory cell array 11, a sense amplifier 12, a control signal generation circuit 16 controlling read operation by the sense amplifier 12, and cell source monitor circuit 21 detecting cell source voltage Vcs of a common source line CELSRC connected to a plurality of memory cell units during read of data of memory cells while comparing the detected cell source voltage Vcs with the reference voltage Vref and outputting a read control signal. The control signal generation circuit 16 controls whether data read operation is finished by the first data read cycle or the second data read cycle is executed, based on the read control signal. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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