INSULATED GATE-TYPE SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

<P>PROBLEM TO BE SOLVED: To properly and selectively control a work function of a tantalum carbide film in an insulated gate-type semiconductor device, related to a method of manufacturing the insulated gate-type semiconductor device. Ž<P>SOLUTION: The method of manufacturing the insulated gate-type semiconductor device has steps of: forming a gate insulating film on a semiconductor substrate; carrying out the film formation of the tantalum carbide film on the gate insulating film; and performing hydrogen plasma treatment after forming a mask pattern having an aperture for exposing a part of the tantalum carbide film. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž