| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film semiconductor device which can form a semiconductor layer having high shape accuracy and thereby can obtain a thin film semiconductor device having excellent characteristics. Ž<P>SOLUTION: An organic semiconductor solution L1 and a polymer solution L2 are individually supplied to the surface of a substrate 1 to form a mixed solution layer 5a of the organic semiconductor solution L1 and the polymer solution L2. A semiconductor layer 5 is formed by drying the mixed solution layer 5a. The organic semiconductor solution L1 and the polymer solution L2 are supplied to the surface of the substrate 1 by a printing method such as an ink-jet method. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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