| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a layout method for arranging in a high density, transverse phase change memories which are easily thinned and are re-written with a low current. Ž<P>SOLUTION: A nonvolatile memory device 21 is provided with: a semiconductor substrate; a plurality of activated regions 3 formed in the semiconductor substrate and extended in a belt shape; a plurality of selection active elements 23 formed in the activated regions 3 and having a first impurity diffusion region and a second impurity diffusion region; a plurality of first electrodes 13 electrically connected with the first impurity diffusion region; a resistance variable layer 12 electrically connected with the first electrode 13; and a plurality of second electrodes electrically connected with the resistance variable layer 12, where an arranging direction of at least one pair of first electrode 13 and second electrode electrically connected with the same resistance variable layer 12 among the plurality of first electrodes 13 and the plurality of second electrodes, and an extended direction of the activated region 3 are not parallel. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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