SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To allow a semiconductor device having a heterostructure and made of a group III-V compound semiconductor to stably perform normally-off operation. SOLUTION: The semiconductor device has a p-GaN layer 32, an Si-GaN layer 62, and an AlGaN layer 34 laminated, and also has a gate electrode 44 Schottky-connected to a top surface side of the AlGaN layer 34. A band gap of the AlGaN layer 34 is larger than those of the p-GaN layer 32 and SI-GaN layer 62, which has an impurity concentration of≤1×1017cm-3as a character. COPYRIGHT: (C)2010,JPO&INPIT