发明名称 Post-Facto Correction for Cross Coupling in a Flash Memory
摘要 A method of storing and reading data, using a memory that includes a plurality of cells (e.g. flash cells), such that data are stored in the cells by setting respective values of a physical parameter of the cells (e.g. threshold voltage) to be indicative of the data, and such that data are read from the cells by measuring those values. One of the cells and its neighbors are read. The data stored in the cell are estimated, based on the measurements and on respective extents to which the neighbors disturb the reading. Preferably, the method also includes determining those respective extents to which the neighbors disturb the reading, for example based on the measurements themselves.
申请公布号 US2010135074(A1) 申请公布日期 2010.06.03
申请号 US20100699747 申请日期 2010.02.03
申请人 ALROD IDAN;SHARON ERAN 发明人 ALROD IDAN;SHARON ERAN
分类号 G11C16/04 主分类号 G11C16/04
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