BUILT-IN COMPLIANCE IN TEST STRUCTURES FOR LEAKAGE AND DIELECTRIC BREAKDOWN OF DIELECTRIC MATERIALS OF METALLIZATION SYSTEMS OF SEMICONDUCTOR DEVICES

摘要

In a test structure for determining dielectric breakdown events of a metallization system of semiconductor devices, a built-in compliance functionality may allow reliable switching off of the test voltage prior to causing high leakage currents, which may conventionally result in significant damage. Consequently, further failure analysis may be possible after the occurrence of a dielectric breakdown event.