发明名称 |
Semiconductor Devices with Current Shifting Regions and Related Methods |
摘要 |
A semiconductor device may include a semiconductor buffer layer having a first conductivity type and a semiconductor mesa having the first conductivity type on a surface of the buffer layer. In addition, a current shifting region having a second conductivity type may be provided adjacent a corner between the semiconductor mesa and the semiconductor buffer layer, and the first and second conductivity types may be different conductivity types. Related methods are also discussed.
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申请公布号 |
US2010133549(A1) |
申请公布日期 |
2010.06.03 |
申请号 |
US20090512281 |
申请日期 |
2009.07.30 |
申请人 |
ZHANG QINGCHUN;AGARWAL ANANT K |
发明人 |
ZHANG QINGCHUN;AGARWAL ANANT K. |
分类号 |
H01L29/24;H01L21/331;H01L29/737 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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