| 摘要 |
Provided is a semiconductor device capable of increasing the capacitance of a capacitor, while reducing an area occupied by the capacitor and inductor on a substrate. The semiconductor device includes a first line; an interlayer insulating film that is formed on the first line and has a recess formed at a location corresponding to the first line; and a second line formed in the recess of the interlayer insulating film. The first line, the second line, and an insulating film formed between the first line and the second line constitute a capacitor. At least one of the first line and the second line constitutes an inductor.
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