| 摘要 |
A semiconductor memory device includes a supporting substrate; an insulation film provided on the supporting substrate; a source layer provided on the insulation film; a drain layer provided on the insulation film; a body region provided between the source layer and the drain layer and being in an electrically floating state, the body region accumulating electric charges or discharging electric charges in order to store data; a boundary gate dielectric film provided at least on a boundary portion between the body region and the source layer and on a boundary portion between the body region and the drain layer; and a center gate dielectric film provided adjacently to the boundary gate dielectric film on the body region, the center gate dielectric film having more interface states than the boundary gate dielectric film has.
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