发明名称 |
Method for fabricating thin film transistor |
摘要 |
A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode; sequentially forming first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound; and forming source and drain electrodes at both sides of the semiconductor layer.
|
申请公布号 |
US2010136755(A1) |
申请公布日期 |
2010.06.03 |
申请号 |
US20100656316 |
申请日期 |
2010.01.25 |
申请人 |
GI JUN WOONG;CHAE GEE SUNG;HEO JAE SEOK |
发明人 |
GI JUN WOONG;CHAE GEE SUNG;HEO JAE SEOK |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|