发明名称 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
摘要 <p>A semiconductor device (10) comprises: a semiconductor substrate (11); a through electrode (17) which is so formed as to penetrate the semiconductor substrate (11) in the thickness direction; an inner electrode (12) which is formed on the surface of the semiconductor substrate (11) at a position where the through electrode (17) reaches, and is electrically connected with the through electrode (17); a first protective film (13A) covering the surface of the semiconductor substrate (11) except a part of the inner electrode (12); a second protective film (13B) which is formed on the part of the inner electrode (12) not covered by the first protective film (13A), with a space from the first protective film (13A); and a metal wiring line (18) which is formed on the back surface of the semiconductor substrate (11) and is electrically connected with the through electrode (17).</p>
申请公布号 WO2010061551(A1) 申请公布日期 2010.06.03
申请号 WO2009JP06218 申请日期 2009.11.19
申请人 PANASONIC CORPORATION;NAKANO, TAKAHIRO;UTSUMI, MASAKI;SANO, HIKARI 发明人 NAKANO, TAKAHIRO;UTSUMI, MASAKI;SANO, HIKARI
分类号 H01L21/3205;H01L21/60;H01L23/12;H01L23/52;H01L27/14 主分类号 H01L21/3205
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