| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a phase-change memory device capable of reading data without causing any performance degradation even when boundary crossing occurs. <P>SOLUTION: The phase-change memory device includes a first mode set to activate, when boundary crossing occurs in a burst mode, both of one word line of a first phase-change memory cell array and one word line of a second phase-change memory cell array, and read data from the first phase-change memory cell array and the second phase-change memory cell array. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
