| 摘要 |
PROBLEM TO BE SOLVED: To provide an asymmetric memory cell and a method of forming an asymmetric memory cell. SOLUTION: The method includes: a step of forming a bottom electrode having a first area; a step of forming an electrical pulse-varying resistance (EPVR) material put on the bottom electrode; and a step of forming a top electrode to put on the EPVR layer with a second area smaller than the first area. In some aspects, the second area is at least about 20% or smaller than the first area. The EPVR material is a colossal magnetoresistance (CMR) material, a high-temperature superconductor (HTSC) material, a perovskite metal oxide material or the like. The method further includes: a step of inducing an electric field between the electrodes; a step of inducing a current in the EPVR adjacent to the top electrode; and a step of adjusting a resistance value of the EPVR according to the step of inducing the current in the EPVR adjacent to the top electrode. Normally, the resistance is adjusted within a range of 100 ohms to 10 megohms. COPYRIGHT: (C)2010,JPO&INPIT |
