发明名称 NITRIDE SEMICONDUCTOR LASER ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To prevent a current leak in a concave part of an element separating groove or the like, and to prevent a fluctuation phenomenon of an oscillation threshold of an laser element even if a sufficiently deep concave part is formed. Ž<P>SOLUTION: A nitride semiconductor laser element is formed on a substrate 101 and includes a laminated structure 120 containing an active layer 105, and a p-type electron barrier layer 106, an n-type current block layer 108 and p-type light guide layers 107, 111. In the n-type current block layer, a current injection part 108a which is a first opening and a current shutoff part 108b which is a second opening are formed, and the p-type light guide layer 111 is also formed in the current injection part 108a and the current shutoff part 108b. The laminated structure 120 includes the element separating groove 117 formed outside the current shutoff part for the current injection part and penetrating the p-type electron barrier layer, and a current block groove 116 formed between the electron injection part and current shutoff part, and the bottom face of groove is positioned above the lower face of the p-type electron barrier layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010123869(A) 申请公布日期 2010.06.03
申请号 JP20080298269 申请日期 2008.11.21
申请人 PANASONIC CORP 发明人 KAJITANI RYO;ISHIDA MASAHIRO;TAMURA SATOYUKI
分类号 H01S5/223;H01S5/323 主分类号 H01S5/223
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