| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film transistor with high production efficiency, and a method for manufacturing the same. Ž<P>SOLUTION: The manufacturing method of a thin-film transistor having at least a gate electrode, an oxide semiconductor layer, a source electrode and a drain electrode is characterized by the following. After forming a liquid-repellent pattern having fluid electrode material repellency on the oxide semiconductor layer, the fluid electrode material is provided to a region that is adjacent while holding the liquid-repellent pattern. After that, the source electrode and the drain electrode composed of the fluid electrode material are formed by dividing the fluid electrode material by the liquid-repellent pattern. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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