| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device that suppresses complicated processes and a drop of yield and has adhesion strength enough to prevent the peeling of electrodes, and to provide the manufacturing method thereof. Ž<P>SOLUTION: The nitride semiconductor device includes: a first conductive type semiconductor layer 1 having a ridge 2 on its surface; an insulation film 3 that is stacked on the semiconductor layer 1 to cover at least digging bottoms on both sides of the ridge 2; and an electrode 5 that is continuously formed on the upper surface of the ridge 2 and the surface of the insulation film 3. The insulation film includes a roughened surface 4 wherein a concave and convex section is formed by roughening. The manufacturing method thereof includes; (a) a step to form the ridge 2 on the surface of the semiconductor layer 1; (b) a step to cover at least digging bottoms on both side of the ridge 2 with the insulation film 3; (c) a step to form the roughened surface 4 on the surface of the insulation film 3; and (d) a step to continuously form the electrode 5 on the upper surface of the ridge 2 and the surface of the insulation film 3. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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