| 摘要 |
A semiconductor device includes a Si substrate, an insulating film formed on one part of the Si substrate, a bulk Si region grown on other part of the Si substrate other than the insulating film, Si1-xGex (0<x≦̸1) thin film formed on the insulating film in direct contact with the insulating film, and substantially flush with top of the bulk Si region, a first field effect transistor fabricated in the bulk Si region, and a second field effect transistor fabricated in the Si1-xGex thin film.
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