| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method of a semiconductor device enhancing the production yield of a semiconductor device without impairing the rapidity of the inspection in the production technology of a semiconductor device including an inspection process for a multilayer wiring layer. SOLUTION: This production method of a semiconductor device is a production method including: a process (process s03, s05) for forming an intermediate wiring layer containing a first wiring pattern having a large plane face area and a second wiring pattern having a small area and becoming into suspension on a main face of a semiconductor wafer; a process (process s04, s06) for forming a via layer; a process (process s07) for forming a top wiring layer containing a first top wiring pattern conducted with the first wiring pattern and a second top wiring pattern conducted with the second wiring pattern; a potential contrast observation process (vc01, vc02) after the formation of the intermediate wiring layer; and an electrical inspection process (ec01) after the formation of the top wiring layer in which a conduction state is inspected by applying a potential difference to between the first top wiring pattern and the second top wiring pattern. COPYRIGHT: (C)2010,JPO&INPIT |
