SYNCHRONOUS PULSE PLASMA ETCHING EQUIPMENT

摘要

PURPOSE: A synchronous pulse plasma etching machine is provided to provide a variety of operational mode by synchronizing a plurality of pulse modulated radio frequency(RF) power and applying the power to electrodes. CONSTITUTION: A first electrode(10) and a second electrode(20) generate plasma in a plasma etching chamber. A first RF power output unit(30) applies a first RF power with a first frequency and a first duty ratio to a first electrode. A second RF power output unit(40) applies a second RF power with a second frequency and a second duty ratio to a second electrode. A mode selection unit(50) outputs first selection signal and second selection signal. A bias controller(46) outputs a bias pulse signal. A bias mixer(44) outputs a pulse modulated RF bias power.