发明名称 POWER SEMICONDUCTOR MODULE AND MANUFACTURING METHOD THEREOF
摘要 A power semiconductor module includes: a circuit board having a metal base plate, a high thermal conductive insulating layer, and a wiring pattern; power semiconductor elements electrically connected to the wiring pattern; tubular external terminal connection bodies provided to the wiring pattern for external terminals; and a transfer mold resin body encapsulated to expose through-holes in the metal base plate and used to fixedly attach cooling fins to the face of the metal base plate on the other side with attachment members, the face of the metal base plate on the other side, and top portions of the tubular external terminal connection bodies, to form insertion holes for the attachment members communicating with the through-holes and having a larger diameter than the through-holes, and to cover the one side and side faces of the metal base plate and the power semiconductor elements.
申请公布号 US2010133684(A1) 申请公布日期 2010.06.03
申请号 US20090535222 申请日期 2009.08.04
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 OKA SEIJI;OBIRAKI YOSHIKO;OI TAKESHI
分类号 H01L23/34;H01L21/56 主分类号 H01L23/34
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