发明名称 METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND REACTION APPARATUS
摘要 <p>Disclosed is a method wherein a semiconductor substrate is produced by heat-treating a base substrate that comprises a part to be heat-treated, which has a single crystal layer and is subjected to a heat treatment, and a part to be protected, which is protected from the heat applied during the heat treatment.  The method for producing a semiconductor substrate comprises a step wherein a protective layer is formed on top of the part to be protected for the purpose of protecting the part to be protected from an electromagnetic wave irradiated onto the base substrate, and a step wherein the part to be heat-treated is annealed by irradiating the whole of the base substrate with an electromagnetic wave.</p>
申请公布号 WO2010061615(A1) 申请公布日期 2010.06.03
申请号 WO2009JP06403 申请日期 2009.11.26
申请人 SUMITOMO CHEMICAL COMPANY, LIMITED;HATA, MASAHIKO;TAKADA, TOMOYUKI;YAMADA, HISASHI 发明人 HATA, MASAHIKO;TAKADA, TOMOYUKI;YAMADA, HISASHI
分类号 H01L21/26;H01L21/20;H01L21/205;H01L21/268;H01L21/331;H01L21/336;H01L21/338;H01L21/8222;H01L21/8234;H01L21/8248;H01L27/06;H01L27/088;H01L29/737;H01L29/778;H01L29/78;H01L29/786;H01L29/812 主分类号 H01L21/26
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