| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a resist underlayer film to form a resist underlayer film, having a lowered reflectance, a high etching resistance, and high heat and solvent resistances, in particular, without wiggling during substrate etching, and to provide a patterning process that uses the film. <P>SOLUTION: The method for forming the resist underlayer film 3 of a multilayer resist film having at least three layers used in lithography includes, at least a step of coating a resist underlayer film material containing a novolak resin obtained by treating a compound having a bisnaphthol group on a substrate 1, and a step of curing the coated resist underlayer film material by a heat treatment, at a temperature >300 to 600°C for 10-600 s. <P>COPYRIGHT: (C)2010,JPO&INPIT |
