| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device allowing steady-state loss and switching loss to be optimally adjusted after ending a device manufacturing process. SOLUTION: This semiconductor device includes, in a cell region for arranging an IGBT therein, a control gate electrode 13 capable of adjusting the quantity of holes in a p+ type substrate 1 becoming a collector region and the quantity of electrons in an FS layer 2a. Thereby, the semiconductor device allowing stationary loss and switching loss to be optimally adjusted after ending a device manufacturing process can be provided. An application designer (element user) can set optimum loss in accordance with a use condition such as a drive frequency by controlling an electrode provided to the control gate 13. COPYRIGHT: (C)2010,JPO&INPIT |
