发明名称 CAPACITANCE-COUPLING TYPE PLASMA CVD APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a capacitance-coupling type plasma CVD apparatus which can form a film in an adequate state on a strip-shaped film by eliminating the convergence of an electric field in the transportation direction of the strip-shaped film, when forming the thin film on the strip-shaped film by plasma discharge generated between an electrode of a power-feeding side and an electrode of a grounded side. <P>SOLUTION: The capacitance-coupling type plasma CVD apparatus 1 is directed for forming the thin film on the strip-shaped film 5 by plasma discharge generated between a pair of the electrode 3 of the power-feeding side and the electrode 4 of the grounded side, which has been arranged in a container 2 that can be decompressed while keeping a predetermined gap between the electrodes; and has a transport mechanism 6 which passes the strip-shaped film 5 that has been drawn out from a delivery roll 9 having the strip-shaped film 5 wound thereon through the space between the electrode 3 of the power-feeding side and the electrode 4 of the grounded side, and winds the strip-shaped film around a winding roll 14. Only the edge part of the electrode 3 of the power-feeding side, which is on the surface that opposes to the electrode 4 of the grounded side and intersects the transportation direction for the strip-shaped film 5, is formed in a Rogowski shape or an approximated Rogowski shape. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010121156(A) 申请公布日期 2010.06.03
申请号 JP20080294366 申请日期 2008.11.18
申请人 FUJI ELECTRIC HOLDINGS CO LTD 发明人 YOSHIDA HIROTOMO
分类号 C23C16/54;C23C16/509;H01L31/04 主分类号 C23C16/54
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