发明名称 RESISTANCE MEASURING METHOD OF THIN FILM, AND FORMING METHOD OF MAGNETORESISTANCE EFFECT FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a resistance measuring method of a thin film capable of measuring with high precision resistance in a direction perpendicular to the film face of the thin film such as a thin film magnetoresistance effect film, and a forming method of a magnetoresistance effect film using the resistance measuring method. Ž<P>SOLUTION: The resistance measuring method of a thin film comprises: a process for forming a sample for measuring the resistance generated by laminating an amorphous layer 25, a first conductive layer 13, a thin film 32 which is an object for measuring the resistance and a second conductive layer 20 in this order on a substrate 11; and a process for measuring the resistance of the thin film in a direction perpendicular to the film face of the thin film by contacting probes 10a to 10d for measuring the resistance with the surface of a top layer 21 on the substrate 11 in the sample. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010123670(A) 申请公布日期 2010.06.03
申请号 JP20080294526 申请日期 2008.11.18
申请人 FUJITSU LTD 发明人 KAWAI KENICHI
分类号 H01L43/12;G01R27/02;G11B5/39;G11B5/455;H01L43/08 主分类号 H01L43/12
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