| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a high quality semiconductor crystal having few crystal defects with satisfactory reproducibility. Ž<P>SOLUTION: This method for producing a semiconductor crystal includes: providing a crucible 6 for growing the crystal in a furnace having a heater 3 for heating the crucible 6; bringing a semiconductor melt 5 accommodated in the crucible 6 into contact with a seed crystal 10 provided at the bottom part of the crucible 6, and then gradually solidifying the semiconductor melt 5 upward from the seed crystal 10 side. In the method, the growth of the semiconductor crystal 12 is allowed to proceed according to the movement of a heat ray-shielding tool 4 for shielding heat ray from the heater 3 to the crucible 6 by gradually moving the heat ray shielding tool 4 upward. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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