| 摘要 |
[PROBLEMS] To provide a composition for resist lower layer film formation, which can be evenly coated and can suppress the occurrence of a sublimate in heat curing. There is also provided a composition for forming a resist lower layer film having a large dry etching selection ratio relative to an upper layer resist. [MEANS FOR SOLVING PROBLEMS] A composition for resist lower layer film formation for lithography, comprising a polysilane compound having a unit structure represented by formula (1) [Chemical formula 1] (1) wherein Rand Reach independently represent a group represented by-X-Y, wherein X represents an oxygen atom, an alkylene group having 1 to 18 carbon atoms, or-OCH-wherein n is an integer of 1 to 18; and Y represents a lactone ring or an adamantane ring, orone of Rand Rrepresents a group represented by-X-Y while the other represents an aryl group, a methyl group, an ethyl group, or a cycloalkyl group having 3 to 6 carbon atoms, and a composition for resist lower layer film formation for lithography, comprising an organic solvent.
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