| 摘要 |
In a circuit device having a field effect transistor and a capacitor, the capacitor is connected to at least one of a gate electrode (24), a source electrode (21) and a drain electrode (22) of a field effect transistor, the field effect transistor has a channel comprised of a first nano-wire (20), and the capacitor comprises a first electrode (8) comprised of a second nano-wire having electroconductivity, a dielectric layer (9) partly covering the peripheral face of the first electrode (8) and a second electrode (10) covering the peripheral face of the dielectric layer (9). The circuit device is used in DRAMs, TFTs, and displays. |
