| 摘要 |
A semiconductor device (1; 2; 3) includes: a connecting body (100; 7) including a connecting electrode (110; 64a); and at least one semiconductor chip (5) stacked on the connecting body (100; 7), the semiconductor chip (5) including: a substrate (10); and a trans-substrate conductive plug (30) that penetrates the substrate (10), the trans-substrate conductive plug (30) having a first terminal (30a) that is provided on an active surface side of the substrate (10); and a second terminal (30b) that is provided on a back surface side that is opposite the active surface side, an outer shape of the first terminal (30a) being formed larger than an outer shape of the second terminal (30b), wherein the second terminal (30b) of the semiconductor chip (5) is electrically connected to a connecting electrode (110; 64a) of the connecting body (100; 7) via a brazing material (40; 110; 65). |
