| 摘要 |
<p>An n-type polysilicon thin film, an intrinsic polysilicon thin film and a p-type polysilicon thin film are formed on a transparent conductive film of a glass substrate by the plasma enhanced CVD method at a plasma excitation frequency of 81.36 MHz so as to obtain a photoelectric conversion layer. The n-type polysilicon thin film and the intrinsic polysilicon thin film are then formed so that the crystallization ratio of the n-doped layer located on the incident light side becomes equal to or greater than the crystallization ratio of the intrinsic layer. Thus, a thin film solar cell having an appropriate structure of a junction interface between the n-layer and the intrinsic layer is obtained.</p> |
