发明名称 |
Semiconductor device having a driver TFT and a pixel TFT on a common substrate |
摘要 |
<p>A semiconductor device having high reliability, in which TFTs with appropriate structures for the circuit functions are arranged, is provided. Gate insulating films (115) and (116) of a driver TFT are designed thinner than a gate insulating film (117) of a pixel TFT in a semiconductor device having a driver circuit and a pixel section on the same substrate. In addition, the gate insulating films (115) and (116) of the driver TFT and a dielectric (118) of a storage capacitor are formed at the same time, so that the dielectric (118) may be extremely thin, and a large capacity can be secured. <IMAGE></p> |
申请公布号 |
EP1020920(B1) |
申请公布日期 |
2010.06.02 |
申请号 |
EP19990126226 |
申请日期 |
1999.12.30 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;KOYAMA, JUN;SHIBATA, HIROSHI;FUKUNAGA, TAKESHI |
分类号 |
H01L27/12;G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L27/13;H01L29/04;H01L29/423;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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