发明名称 |
METHOD FOR MAKING A SEMI-CONDUCTING SUBSTRATE LOCATED ON AN INSULATION LAYER |
摘要 |
A method for making a silicon layer extending on an insulation layer, including the steps of forming a silicon-germanium layer on at least a portion of a silicon wafer; transforming portions of the silicon-germanium layer into porous silicon pads; growing a monocrystalline silicon layer on the silicon-germanium layer and on the porous silicon pads; removing the silicon-germanium layer; oxidizing the porous silicon pads; and depositing an insulation material on the silicon layer. |
申请公布号 |
EP2191501(A1) |
申请公布日期 |
2010.06.02 |
申请号 |
EP20080840579 |
申请日期 |
2008.09.26 |
申请人 |
STMICROELETRONICS CROLLES 2 SAS |
发明人 |
HALIMAOUI, AOMAR;BENSAHEL, DANIEL |
分类号 |
H01L21/762;H01L21/20;H01L21/3063;H01L21/316 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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