发明名称 Manufacturing method of semiconductor device
摘要 To provide a thin semiconductor device having flexibility. A groove is formed in one surface of a substrate; an element layer including an element is formed, the element being disposed within the groove; the substrate is thinned from the other surface of the substrate until one surface of the element layer is exposed, to form a layer which is to be transposed, having the element; and the layer to be transposed is transposed onto the film.
申请公布号 US7727857(B2) 申请公布日期 2010.06.01
申请号 US20060588317 申请日期 2006.10.27
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD 发明人 TSURUME TAKUYA
分类号 H01L21/30 主分类号 H01L21/30
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