发明名称 Photodiode and method for fabricating same
摘要 A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
申请公布号 US7728366(B2) 申请公布日期 2010.06.01
申请号 US20050599609 申请日期 2005.04.05
申请人 NEC CORPORATION 发明人 OOHASHI KEISHI;ISHI TSUTOMU;BABA TOSHIO;FUJIKATA JUNICHI;MAKITA KIKUO
分类号 H01L31/113;H01L31/0216;H01L31/0224;H01L31/108 主分类号 H01L31/113
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