发明名称 |
Photodiode and method for fabricating same |
摘要 |
A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
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申请公布号 |
US7728366(B2) |
申请公布日期 |
2010.06.01 |
申请号 |
US20050599609 |
申请日期 |
2005.04.05 |
申请人 |
NEC CORPORATION |
发明人 |
OOHASHI KEISHI;ISHI TSUTOMU;BABA TOSHIO;FUJIKATA JUNICHI;MAKITA KIKUO |
分类号 |
H01L31/113;H01L31/0216;H01L31/0224;H01L31/108 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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