发明名称 Edge illuminated photodiodes
摘要 This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.
申请公布号 US7728367(B2) 申请公布日期 2010.06.01
申请号 US20070849623 申请日期 2007.09.04
申请人 UDT SENSORS, INC. 发明人 BUI PETER STEVEN;TANEJA NARAYAN DASS;MANSOURI MANOOCHER
分类号 H01L31/062;H01L31/0232;H01L31/06;H01L31/113 主分类号 H01L31/062
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