发明名称 Verticle BJT, manufacturing method thereof
摘要 A vertical BJT which has a maximal current gain for a photodiode area. According to embodiments, since the BJT can be formed together with the photodiode, and collector current flows up and down based on the double base structure, the magnitude of the current may be increased.
申请公布号 US7728408(B2) 申请公布日期 2010.06.01
申请号 US20070841032 申请日期 2007.08.20
申请人 DONGBU HITEK CO., LTD. 发明人 LIM SU
分类号 H01L21/331 主分类号 H01L21/331
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