发明名称 |
Method of forming a semiconductor device having a removable sidewall spacer |
摘要 |
A semiconductor device is formed using a semiconductor substrate. A gate dielectric is formed over the semiconductor substrate. A gate electrode layer is formed over the gate dielectric. A patterned masking layer is formed over the gate electrode layer. A first region of the gate electrode layer lies within an opening in the patterned masking layer. The first region of the gate electrode layer is partially etched to leave an elevated portion of the gate electrode layer and a lower portion adjacent to the elevated portion. A sidewall spacer is formed adjacent to the elevated portion and over the lower portion. An implant is performed into the semiconductor substrate using the elevated portion and the sidewall spacer as a mask. The sidewall spacer and the lower portion are removed.
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申请公布号 |
US7727829(B2) |
申请公布日期 |
2010.06.01 |
申请号 |
US20070671567 |
申请日期 |
2007.02.06 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
TRIVEDI VISHAL P.;MATHEW LEO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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