发明名称 |
Semiconductor device in which GaN-based semiconductor layer is selectively formed |
摘要 |
A semiconductor device includes a mask layer having openings on a substrate, a GaN-based semiconductor layer selectively formed on the substrate with the mask layer that serves as a mask, a gate electrode and either a source electrode or an emitter electrode formed on the GaN-based semiconductor layer, and a drain electrode or a collector electrode connected on a surface of the first semiconductor layer that faces the GaN-based semiconductor layer or an opposite side of the first semiconductor layer.
|
申请公布号 |
US7728353(B2) |
申请公布日期 |
2010.06.01 |
申请号 |
US20060392549 |
申请日期 |
2006.03.30 |
申请人 |
EUDYNA DEVICES INC. |
发明人 |
YAEGASHI SEIJI;KAWASAKI TAKESHI;NAKATA KEN |
分类号 |
H01L29/20;H01L21/336;H01L21/337;H01L21/338;H01L29/12;H01L29/739;H01L29/78;H01L29/786;H01L29/808;H01L29/812;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109 |
主分类号 |
H01L29/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|