| 摘要 |
A power semiconductor component stack, using lead technology with surface-mountable external contacts, includes at least two MOSFET power semiconductor components each having a top side and an underside. The underside includes: a drain external contact area, a source external contact area and a gate external contact area. The top side includes at least one source external contact area and a gate external contact area. The gate external contact areas on the top side and the underside are electrically connected to one another. The power semiconductor component stack is a series circuit or a parallel circuit of MOSFET power semiconductor components arranged one above another in a plastic housing composition. |
