发明名称 Processing method, manufacturing method of semiconductor device, and processing apparatus
摘要 A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.
申请公布号 US7727853(B2) 申请公布日期 2010.06.01
申请号 US20080216228 申请日期 2008.07.01
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKEISHI TOMOYUKI;KAWANO KENJI;IKEGAMI HIROSHI;ITO SHINICHI;TAKAHASHI RIICHIRO
分类号 H01L21/76;B23K26/06;G03F7/20;G03F9/00;G21K5/10;H01L23/544 主分类号 H01L21/76
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