| 摘要 |
The present invention discloses a vertical phase-change-memory (PCM) cell, comprising a stack of a bottom electrode (5) contacting a first layer of phase change material (14), a dielectric layer (12) having an opening (13), a second layer of phase change material (6) in contact with the first layer of phase change material through the opening in the dielectric layer and a top electrode (7) contacting this second layer of phase change material.
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