发明名称 |
Methods of fabricating an electronic device and an sililation polyvinyl phenol for a dielectric layer of an electronic device |
摘要 |
A method of fabricating an electronic device is disclosed. The method of fabricating an electronic device comprises providing a substrate. A first conductive layer is formed on the substrate. A silylation polyphenol (PVP) dielectric layer is formed on the first conductive layer. A patterned second conductive layer is formed on the silylation PVP dielectric layer.
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申请公布号 |
US7727703(B2) |
申请公布日期 |
2010.06.01 |
申请号 |
US20060594154 |
申请日期 |
2006.11.08 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
LO PO-YUAN;YANG FENG-YU;PEI ZING-WAY |
分类号 |
G03F7/00;G03F7/004;G03F7/075 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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