发明名称 Methods of fabricating an electronic device and an sililation polyvinyl phenol for a dielectric layer of an electronic device
摘要 A method of fabricating an electronic device is disclosed. The method of fabricating an electronic device comprises providing a substrate. A first conductive layer is formed on the substrate. A silylation polyphenol (PVP) dielectric layer is formed on the first conductive layer. A patterned second conductive layer is formed on the silylation PVP dielectric layer.
申请公布号 US7727703(B2) 申请公布日期 2010.06.01
申请号 US20060594154 申请日期 2006.11.08
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 LO PO-YUAN;YANG FENG-YU;PEI ZING-WAY
分类号 G03F7/00;G03F7/004;G03F7/075 主分类号 G03F7/00
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