| 摘要 |
A layer stack including an operating semiconductor layer and a low resistance semiconductor layer is patterned by using a first mask pattern so as to have an insular shape and then a circumferential sidewall of the layer stack whose top surface is covered by the first mask pattern is oxidized under a condition that at least ends of the first mask pattern which ends contacts the low resistance semiconductor layer are not positioned behind ends of the layer stack which ends contacts the first mask pattern, thereby forming a sidewall oxidized film only on the circumferential sidewall of the layer stack. After the first mask pattern is removed, an electrode/wiring layer is formed on the layer stack by using a second mask pattern, the electrode/wiring layer being electrically connected with the low resistance semiconductor layer and having the same shape as the low resistance semiconductor layer at a region where the insular operating semiconductor layer is formed. |
