发明名称 Semiconductor device and manufacturing method thereof
摘要 It is an object of the present invention to provide a semiconductor device in which a barrier property is improved; a compact size, a thin shape, and lightweight are achieved; and flexibility is provided. By providing a stacked body including a plurality of transistors in a space between a pair of substrates, a semiconductor device is provided, in which a harmful substance is prevented from entering and a barrier property is improved. In addition, by using a pair of substrates which are thinned by performing grinding and polishing, a semiconductor device is provided, in which a compact size, a thin shape, and lightweight are achieved. Further, a semiconductor device is provided, in which flexibility is provided and a high-added value is achieved.
申请公布号 US7727859(B2) 申请公布日期 2010.06.01
申请号 US20060450298 申请日期 2006.06.12
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD 发明人 WATANABE YASUKO;MARUYAMA JUNYA;MORIYA YOSHITAKA
分类号 H01L21/30 主分类号 H01L21/30
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