发明名称 Method and apparatus for a process, voltage, and temperature variation tolerant semiconductor device
摘要 A method and apparatus to reduce the degradation in performance of semiconductor-based devices due to process, voltage, and temperature (PVT) and/or other causes of variation. Adaptive feedback mechanisms are employed to sense and correct performance degradation, while simultaneously facilitating configurability within integrated circuits (ICs) such as programmable logic devices (PLDs). A voltage-feedback mechanism is employed to detect PVT variation and mirrored current references are adaptively adjusted to track and substantially eliminate the PVT variation. More than one voltage-feedback mechanism may instead be utilized to detect PVT-based variations within a differential device, whereby a first voltage-feedback mechanism is utilized to detect common-mode voltage variation and a second voltage-feedback mechanism produces mirrored reference currents to substantially remove the common-mode voltage variation and facilitate symmetrical operation of the differential device. Edge boosting modules are employed to improve performance during reduced output common mode voltage modes of operation.
申请公布号 US7728630(B1) 申请公布日期 2010.06.01
申请号 US20090362417 申请日期 2009.01.29
申请人 XILINX, INC. 发明人 REN GUO JUN;ZHANG QI;SODHA KETAN
分类号 H03K19/094;H03K19/0175 主分类号 H03K19/094
代理机构 代理人
主权项
地址